TOSHIBA DEVELOPS 40V N-CHANNEL POWER MOSFETS WITH IMPROVED THERMAL PERFORMANCE

- New packaging provides double-sided cooling for improved heat dissipation.

TOKYO, July 31 (Bernama-BUSINESS WIRE) -- In August, Toshiba Electronic Devices & Storage Corporation (“Toshiba”) will start mass production and shipments of “TPWR7904PB” and “TPW1R104PB”, 40V N-channel power MOSFETs for automotive applications. They are housed in the DSOP Advance(WF) packages that deliver double-sided cooling, low resistance, and small size.

The new products secure high heat dissipation and low On-resistance characteristics by mounting a U-MOS IX-H series chip, a MOSFET with the latest trench structure, into a DSOP Advance(WF) package. Heat generated by conduction loss is effectively dissipated, improving the flexibility of thermal design.

The U-MOS IX-H series also delivers lower switching noise than Toshiba’s previous U-MOS IV series, contributing to lower EMI[1].
The DSOP Advance(WF) package has a wettable flank terminal structure[2].

Applications
- Electric power steering
- Load switches
- Electric pumps

Features
- Qualified for AEC-Q101, suitable for automotive applications
- Double-sided cooling package with top plate[3] and drain
- Improved AOI visibility due to wettable flank structure
- U-MOS IX-H series featuring low On-resistance and low noise characteristics

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