KUALA LUMPUR, Dec 9 (Bernama) -- Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (Toshiba) have developed a SiC metal oxide semiconductor field effect transistor (MOSFET) that arranges embedded Schottky barrier diodes (SBD) in a check pattern (check-pattern embedded SBD) to realise both low on-resistance and high reliability.
In a statement, it said the company has confirmed that the design secures an approximately 20 per cent reduction in on-resistance against its current SiC MOSFET, with no loss of reliability.
SiC is widely seen as the next generation material for the devices, as it delivers higher voltages and lower losses than silicon.
While the use of SiC now largely limited to inverters for trains, wider application is on the horizon, in areas including vehicle electrification and the miniaturisation of industrial equipment.
Toshiba has improved both conduction loss in its SBD-embedded SiC MOSFET, and achieved good diode conductivity, by deploying a check-pattern SBD distribution.
This confirmed improvement in the trade-off is essential if SiC MOSFETs are to be used in inverters for motor drive applications.
Details of the achievement were reported at the 68th Annual IEEE International Electron Devices Meeting, an international power semiconductor conference held in San Francisco, USA, on Dec 3 to 7.
Toshiba is continuing to carry out evaluations toward improving dynamic characteristics and reliability, and to develop attractive, high-performance power semiconductors that contribute to carbon neutrality.
-- BERNAMA
No comments:
Post a Comment